#AT45DB081B DataFlash Memory

## Features

* 8 Mbit (1 MByte) Flash Memory
* Two Data Buffers (256 bytes each)
* Main Memory Organization: 4096 Pages x 256 Bytes
* Supports Continuous Array Read
* Status Register for Ready/Busy indication

## Operating Modes

* **Read Commands:**
* Continuous Array Read: Reads data sequentially from the main memory.
* Status Register Read: Checks device status (Ready/Busy, Main Memory Page to Buffer Compare result, density).
* **Programming & Erasing:**
* Buffer to Main Memory Page Program: Programs data from a buffer to a specified page in main memory (requires a previously erased page).
* Page Erase: Erases a single page in main memory.
* Block Erase: Erases a block of 8 pages (can reduce programming time).
* **Addressing:**
* Main Memory: PA11-PA0 (12 bits for page address), BA8-BA0 (9 bits for byte address within the page).
* Buffers: BFA8-BFA0 (9 bits for byte address).

## Detailed Commands

* **81H (Page Erase):** Erases a single page in main memory.
* **50H (Block Erase):** Erases a block of 8 pages.
* **88H/89H (Program):** Transfers data from Buffer 1/2 to a specified page in main memory.
Requires previously erased page.
* **57H/D7H (Status Read):** Reads the status register.

## Timing and Characteristics

* Programming Time: tP
* Page Erase Time: tPE
* Block Erase Time: tBE
* Supports SPI Mode 0 or SPI Mode 3