# L9019PN PNP Bipolar Junction Transistor - Key Specifications

This document summarizes the key specifications and features of the L9019PN PNP Bipolar Junction Transistor.

1. General Description:

️· PNP Bipolar Junction Transistor
️· Designed for various applications including switching and amplification

2. Key Electrical Characteristics:

️· DC Current Gain (hFE): 100-600 (at specific test conditions)
️· Collector-Emitter Breakdown Voltage (VCEO): -20V
️· Emitter-Base Breakdown Voltage (VEBO): -5V
️· Collector-Base Breakdown Voltage (VCBO): -40V
️· Collector Cutoff Current (ICBO): ≤ 150nA
️· Collector-Emitter Saturation Voltage (VCE(sat)): ≤ 0.6V (at specified collector current and base current)
️· DC Current Gain Range (hFE): Specified ranges exist (e.g., 100-200, 150-300, 200-400, 300-600) dependent on specific device code.

3. Thermal Characteristics:

️· Total Device Dissipation (Pd): 225mW (on FR-5 board) with derating above 25°C. 300mW (on alumina substrate).
️· Thermal Resistance (RθJA): 556 °C/W (FR-5), 417 °C/W (alumina)
️· Operating and Storage Temperature Range: -55°C to +150°C.

4. Package & Dimensions:

️· TO-92 Package
️· Detailed mechanical dimensions are provided in the datasheet (see dimensions for A, B, C, D, G, H, J, K, L, S, and V) in both millimeters and inches.

5. Pinout:

️· Pin 1: Base
️· Pin 2: Emitter
️· Pin 3: Collector

6. Applications:

️· Switching Circuits
️· Amplification Circuits
️· General Purpose Applications

7. Manufacturer:

️· Shanghai Leiditech Electronic Co., Ltd.

8. Datasheet Reference:

️· Consult the full datasheet (Revision 01.06.2014, www.leiditech.com) for complete specifications and details.