Important Note: The document *explicitly states* this is a product not recommended for new designs. This means it's likely superseded by newer technologies, and you should carefully consider if using it is appropriate for your application.

1. Product Overview

️· Type: 2K x 8 Static RAM (SRAM)
️· Organization: 2048 words x 8 bits
️· Technology: CMOS
️· Operating Voltage: 5V ± 5%
️· Access Time: 35ns (typical, depending on speed grade)
️· Current Consumption: Low power CMOS, varies with access and standby conditions.
️· Package Options: PDIP, PLCC, SO, TSOP (see section at the end for dimensions)

2. Key Features

️· High-Speed Operation: Access times as fast as 35ns.
️· Low-Power Consumption: Suitable for battery-powered applications.
️· Easy Interface: Simple read/write control signals.
️· Static Operation: No clock signal is required (hence "static" RAM).
️· CMOS Technology: Low power and high noise immunity.

3. Functional Description

️· Inputs:
- Address Lines (A0-A10): Select the memory location.
- Chip Enable (CE): Enables/disables the chip.
- Output Enable (OE): Controls the output drivers.
- Write Enable (WE): Enables/disables write operations.
️· Outputs:
- Data Lines (DQ0-DQ7): 8-bit data bus.
️· Read Cycle:
1. Apply valid address.
2. Activate CE and OE signals.
3. Data appears on the data lines.
️· Write Cycle:
1. Apply valid address.
2. Activate CE and WE signals.
3. Apply data to the data lines.

4. Electrical Characteristics

*(This section details specific voltage and current levels. It's important to consult the full datasheet for precise values. Here's a summary)*

️· VCC (Supply Voltage): 5V ± 5%
️· Vih (High-level Input Voltage): Typically 2.4V
️· Vil (Low-level Input Voltage): Typically 0.8V
️· Icc (Supply Current): Varies significantly depending on operating mode (standby, read, write).
️· Input Capacitance: Affects the speed of address/control signal changes.
️· Output Load: Defines the capacitive and resistive load the SRAM can drive.
️· Timing Parameters: Critical for ensuring proper operation. Includes:
- Address Access Time (tAA)
- Chip Enable to Output Delay (tCEO)
- Write Cycle Time (tWC)
- Setup and Hold Times for various signals.

5. Timing Diagrams

*(The datasheet includes detailed timing diagrams illustrating the correct sequencing of control signals for read and write operations. These diagrams are crucial for proper system design.)*

6. Package Information

*(The datasheet provides mechanical drawings and dimensions for the different package options, including:*

️· PDIP (Plastic Dual In-Line Package)
️· PLCC (Plastic Leaded Chip Carrier)
️· SO (Small Outline)
️· TSOP (Thin Small Outline Package)

7. Important Considerations/Warnings

️· Not Recommended for New Designs: This is a key point. Newer memory technologies offer better performance, lower power consumption, and higher densities.
️· ESD Sensitivity: Static RAM is sensitive to Electrostatic Discharge (ESD). Proper ESD handling procedures are essential during handling and assembly.
️· Power-Up Sequencing: Follow the recommended power-up sequence to avoid latch-up and ensure reliable operation.
️· Address/Control Signal Stability: Ensure address and control signals are stable during read and write cycles.



In essence, the M28C16 is a relatively simple, static RAM chip. The datasheet provides the necessary information to interface and control the chip, but it is important to consider its age and the availability of more modern alternatives before using it in a new design.