MMBR941L / New Jersey Semi-Conductor Products, Inc.

MMBR941L Datasheet with Chat AI

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Part No.	MMBR941L
Manufacturer	NJSEMI
Size	69 Kbytes
Pages	2 pages
Description	Silicon NPN RF Transistor

Datasheet Summary with AI

# MMBR941L Silicon NPN RF Transistor

## Description

· Low Noise
· High Current-Gain Bandwidth Product
· Designed for high gain, low noise small-signal amplifiers.

## Absolute Maximum Ratings (Ta=25°C)

· VCBO (Collector-Base Voltage): 20V
· Vceo (Collector-Emitter Voltage): 10V
· VEBO (Emitter-Base Voltage): 1.5V
· Ic (Collector Current - Continuous): 50mA
· PC (Collector Power Dissipation @ Tc=75°C): 0.25W
· Tj (Junction Temperature): 150°C
· Tstg (Storage Temperature Range): -55°C to 150°C

## Package Dimensions (SOT-23)

· A: 0.37mm (Max)
· B: 1.19mm (Max)
· C: 2.10mm (Max)
· D: 0.59mm (Max)
· j.K: 1.73mm (Max)
· L: 2.65mm (Max)
· K: 1.10mm (Max)
· L: 0.15mm (Max)
· 0.076mm (Max)

## Electrical Characteristics (Tc=25°C)

· V(BR)CEO (Collector-Emitter Breakdown Voltage): 10V (Min)
· V(BR)CBO (Collector-Base Breakdown Voltage): 20V (Min)
· IEBO (Emitter Cutoff Current): 50uA (Max)
· ICBO (Collector Cutoff Current): 0.1uA (Max)
· hFE (DC Current Gain): 8 (Typ)
· COB (Output Capacitance): 14 (Typ)
· fT (Current-Gain - Bandwidth Product): 8.0 GHz (Typ)
· Insertion Power Gain: 8.0 dB (Min)
· Insertion Power Gain: 16 dB (Typ)
· GU max (Maximum Unilateral Gain): 10 (Typ)
· GU max: 1.9 (Typ)
· NF (Noise Figure): 0.35 dB (Typ)