1. General Information

️· Product: Silicon NPN RF Transistor
️· Part Number: 2SC3582
️· Manufacturer: ISC Semiconductor
️· Website: www.iscsemi.cn

2. Features/Benefits (Inferred)

️· Designed for RF applications.
️· Relatively high frequency operation (indicated by `fT` and S-parameter data).
️· Low noise figure (1.2 dB) – suitable for sensitive applications.
️· Moderate gain.

3. Absolute Maximum Ratings

Parameter	Value (V)	Value (mA)	Value (°C)	Value (W)
Collector-Base Voltage (VCEO)	20
Collector-Emitter Voltage (VCE)	10
Emitter-Base Voltage (VEBO)	1.5
Collector Current (IC)		65
Collector Power Dissipation (PC)				0.6
Junction Temperature (TJ)			150
Storage Temperature Range (TSTG)			-65 to 150

4. Electrical Characteristics (Tc = 25°C unless otherwise noted)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector Cutoff Current	ICBO	VCB = 10V, IE = 0			1.0	μA
Emitter Cutoff Current	IEBO	VEB = 1V, IC = 0			1.0	μA
DC Current Gain	hFE	IC = 20mA, VCE = 8V	50		250
Current Gain-Bandwidth Product	fT	IC = 20mA, VCE = 8V		8		GHz
Feedback Capacitance	Cre	IE = 0, VCB = 10V, f = 1.0 MHz		0.4	0.9	pF
Insertion Power Gain		IC= 20mA ; VCE= 8V; f= 1.0GHz	9	11		dB
Maximum Available Gain	MAG	IC= 20mA ; VCE= 8V; f= 1.0GHz		13		dB
Noise Figure	NF	IC= 7mA ; VCE= 8V; f= 1.0GHz		1.2	2.5	dB
Class Marking				K

5. S-Parameters (VCE = 8V, ZO = 50Ω)

️· Frequency Ranges: The document provides S-parameter data from 200 MHz to 2000 MHz. (The tables detail values for each frequency).

Key S-Parameter Points:

️· S11 (Reflection Coefficient): Indicates the amount of signal reflected from the transistor’s input. Lower values are better.
️· S21 (Forward Gain): Indicates the signal gain of the transistor. Higher values are generally better.
️· S12 (Reverse Transmission Coefficient): Indicates the signal leakage from the output to the input. Lower values are generally better.
️· S22 (Output Reflection Coefficient): Indicates the amount of signal reflected from the transistor’s output. Lower values are better.

Important Notes and Considerations:

️· Datasheet limitations: This is pieced together from fragmented information. A full datasheet would likely contain more details on biasing circuits, characteristic curves, and testing conditions.
️· S-Parameter Interpretation: A detailed understanding of S-parameter theory is necessary to fully interpret the S-parameter data.
️· Environmental Conditions: The electrical characteristics are specified at Tc = 25°C. Performance will change with temperature.