2SC3583 Transistor - Summary

This document describes the 2SC3583 NPN transistor, manufactured by ISC Semiconductor.

1. Key Features & Applications

️· Designed for RF (Radio Frequency) applications.
️· High gain and good performance characteristics for amplifier circuits.

2. Electrical Characteristics

️· Polarity: NPN
️· Supply Voltage (VCE): 8V (Used in parameter testing)
️· Collector Current (IC): 20mA (Used in parameter testing)
️· Collector Power Dissipation (PC): 0.2W
️· Junction Temperature (TJ): 150°C
️· Storage Temperature Range: -65°C to 150°C

3. Electrical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector Cutoff Current	ICBO	VCB = 10V, IE = 0			1.0	μA
Emitter Cutoff Current	IEBO	VEB = 1V, IC = 0			1.0	μA
DC Current Gain	hFE	IC = 20mA, VCE = 8V	50		250
Current Gain Bandwidth	fT	IC = 20mA, VCE = 8V		9		GHz
Feedback Capacitance	Cre	IE = 0, VCB = 10V, f = 300MHz		0.35	0.9	pF
Insertion Power Gain		IC = 20mA, VCE = 8V, f = 1.0GHz	11	13		dB
Maximum Available Gain	MAG	IC = 20mA, VCE = 8V, f = 1.0GHz		15		dB
Noise Figure	NF	IC = 7mA, VCE = 8V, f = 1.0GHz		1.2	2.5	dB

hFE Classification (Marking):

️· R33: hFE = 50-100
️· R34: hFE = 80-160
️· R35: hFE = 125-250

4. S-Parameters (Small-Signal Parameters)

️· The document provides tables of S-parameters for two test configurations:
- VCE = 8V, IC = 5mA, ZO = 50Ω
- VCE = 8V, IC = 20mA, ZO = 50Ω
️· These S-parameters characterize the transistor's behavior in a small-signal AC environment.

5. Manufacturer Information

️· Manufacturer: ISC Semiconductor
️· Website: www.iscsemi.cn

Important Notes:

️· "ZO" represents the characteristic impedance.
️· The S-parameter values are dependent on the test conditions (voltage, current, and impedance).
️· Always refer to the complete datasheet for detailed information and safety precautions.