| Manufacturer | Part # | Datasheet | Description |

Infineon Technologies A...
|
BSF450NE7NH3G |
1Mb/14P |
OptiMOS짧3 Power-MOSFET, 75 V Rev.2.2,2015-03-30 |
| ITS4075Q-EP-D |
1Mb/42P |
75 m廓 Quad Channel Smart High-Side Power Switch Rev. 1.01 2018-06-14 |
| SGP02N60 |
358Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 Sep 07 |
| SGB10N60A |
795Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 July 07 |
| SGB02N60 |
798Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 Nov 06 |
| SGB20N60 |
795Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.2 Nov 06 |
| SGB30N60 |
382Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 05.03.2009 |
| SGP20N60 |
364Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.4 Nov 09 |
| SGP10N60A |
353Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.5 Nov 09 |
| SGB04N60 |
792Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 Nov 06 |
| SGP15N60 |
339Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 Sep 08 |
| SGB06N60 |
790Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.2 Nov 06 |
| SGP04N60 |
347Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.2 Sep 07 |
| 2N7002DW |
448Kb/9P |
Dual N-channel Rev.2.3 2014-09-19 |
| BSD840N |
442Kb/9P |
Dual N-channel Rev 2.4 2014-09-19 |
| BSC014NE2LSI |
1Mb/12P |
n-Channel Power MOSFET 2.1, 2011-09-08 |
| BSC010NE2LSI |
1Mb/12P |
n-Channel Power MOSFET 2.1, 2011-09-08 |
| BSZ018NE2LS |
1Mb/11P |
n-Channel Power MOSFET V2.0, 2011-03-29 |
| BSZ036NE2LS |
1Mb/11P |
n-Channel Power MOSFET V.2.0, 2011-03-18 |
| BSZ0901NS |
1Mb/11P |
n-Channel Power MOSFET V 2.0, 2011-03-29 |