| Manufacturer | Part # | Datasheet | Description |

Infineon Technologies A...
|
BSF450NE7NH3G |
1Mb/14P |
OptiMOS짧3 Power-MOSFET, 75 V Rev.2.2,2015-03-30 |
| ITS4075Q-EP-D |
1Mb/42P |
75 m廓 Quad Channel Smart High-Side Power Switch Rev. 1.01 2018-06-14 |
| SGP02N60 |
358Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 Sep 07 |
| SGB10N60A |
795Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 July 07 |
| SGB02N60 |
798Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 Nov 06 |
| SGB20N60 |
795Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.2 Nov 06 |
| SGB30N60 |
382Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 05.03.2009 |
| SGP20N60 |
364Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.4 Nov 09 |
| SGP10N60A |
353Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.5 Nov 09 |
| SGB04N60 |
792Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 Nov 06 |
| SGP15N60 |
339Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.3 Sep 08 |
| SGB06N60 |
790Kb/11P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.2 Nov 06 |
| SGP04N60 |
347Kb/12P |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation Rev. 2.2 Sep 07 |
| BGA416 |
288Kb/8P |
RF Cascode Amplifier Rev. 2.1, April 2008 |
| BGA416 |
88Kb/8P |
RF Cascode Amplifier June 2002 |
| BGS12A |
298Kb/8P |
SPDT RF Switch V1.1, Sep. 2007 |
| BGS12AL7-6 |
1Mb/16P |
SPDT RF Switch Revision 2.0, 2009-11-24 |
| BGS12AL7-4 |
1Mb/15P |
SPDT RF Switch Revision 1.3, 2009-06-24 |
| BGS14AN16 |
2Mb/15P |
RF SP4T Switch Revision 1.0, 2012-12-17 |
| BAR1 |
848Kb/7P |
RF switch, RF attenuator for frequencies above 10 MHz 2007-04-19 |