| Manufacturer | Part # | Datasheet | Description |

Nexperia B.V. All right...
|
PDTC114ET |
240Kb/13P |
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 1 July 2022 |
| PDTA114EM |
229Kb/11P |
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 7 February 2023 |
| PDTA114ET-Q |
228Kb/11P |
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 7 February 2023 |
| PDTA114EU-Q |
224Kb/10P |
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 7 February 2023 |
| PDTC114ET-Q |
242Kb/13P |
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 7 October 2021 |
| PHPT61010NY |
720Kb/16P |
100 V, 10 A NPN high power bipolar transistor 20 March 2015 |
| PHPT61010PY |
719Kb/16P |
100 V, 10 A PNP high power bipolar transistor 20 March 2015 |
| PUMH11-Q |
237Kb/12P |
50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 8 October 2021 |
| PMEG100V100ELPE-Q |
272Kb/12P |
100 V, 10 A low leakage current Schottky barrier rectifier 20 July 2022 |
| PMEG100V100ELPE |
272Kb/12P |
100 V, 10 A low leakage current Schottky barrier rectifier 20 July 2022 |
| PMEG100V100ELPD |
256Kb/13P |
100 V, 10 A low leakage current Schottky barrier rectifier |
| PUMH11 |
796Kb/11P |
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ 1 October 2022 |
| PUMD3-Q |
279Kb/15P |
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ 7 October 2021 |
| PEMH11 |
223Kb/11P |
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ 29 December 2022 |
| PSMN8R9-100BSE |
319Kb/12P |
N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK 28 October 2020 |
| PMEG100T100ELPE |
270Kb/13P |
100 V, 10 A low leakage current Trench MEGA Schottky barrier rectifier 3 December 2020 |
| PMEG100T100ELPE-Q |
271Kb/13P |
100 V, 10 A low leakage current Trench MEGA Schottky barrier rectifier 12 May 2021 |
| PDTC114YU-Q |
228Kb/12P |
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ 8 March 2022 |
| PDTC114YT-Q |
230Kb/12P |
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ 8 March 2022 |
| PUMD4-Q |
217Kb/11P |
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = open 28 September 2022 |