| Manufacturer | Part # | Datasheet | Description |

Siemens Semiconductor G...
|
BUZ382 |
160Kb/9P |
SIPMOS Power Transistor(400 V 12.5A 0.4 Ohm TO-218AA) |
| BTS428L2 |
88Kb/12P |
Smart High-Side Power Switch One Channel:60m-ohm Status Feedback |
| BF1012W |
359Kb/3P |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
| BF543 |
97Kb/5P |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
| BF999 |
116Kb/5P |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
| BF2030 |
16Kb/2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| BF2040W |
31Kb/2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| BF2030W |
16Kb/2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| BF2040 |
16Kb/2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| BF987 |
79Kb/5P |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
| STL39002Z |
58Kb/3P |
IRED in TO-Package |
| BF1009 |
36Kb/4P |
Silicon N-Channel MOSFET Tetrode |
| BUZ332A |
215Kb/9P |
SIPMOS Power Transistor(N Channel) |
| BUZ91 |
121Kb/9P |
SIPMOS Power Transistor(N Channel) |
| BF2000 |
19Kb/3P |
Silicon N Channel MOSFET Tetrode |
| BUZ332 |
154Kb/9P |
SIPMOS Power Transistor(N Channel) |
| BF1009S |
51Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
| BF1012S |
43Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| BF1005 |
51Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| BF1012 |
33Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |