10/100/1000M Datasheet(PDF) - CMPA0560008S

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	CMPA0560008S	859Kb/17P	0.5 – 6 GHz, 10 W GaN HPA Rev. 0.1 May 2023
	CGH55015F2-P2	3Mb/11P	10 W, C-Band, Unmatched, GaN HEMT Rev. 4.2, 2022-12-13
	CGHV40100	2Mb/16P	100 W, DC - 3.0 GHz, 50 V, GaN HEMT Rev. 3.7, 2022-12-13
	CG2H40010	1Mb/14P	10 W, DC - 8 GHz, RF Power GaN HEMT Rev. 2.0, 2022-7-7
	CGH40010	1Mb/16P	10 W, DC - 6 GHz, RF Power GaN HEMT Rev. 4.4, 2022-10-28
	AMS2710	597Kb/8P	PCB pressure sensor module with 0 .. 10 V output February 2018 Rev. 1.0
	AMS4710	610Kb/8P	Miniaturized pressure transmitter with analog 0 ... 10 V output March 2020 Rev. 1.0
	CMPA901A035F1	1Mb/15P	35 W, 9.0 - 10 GHz, GaN MMIC, Power Amplifier Rev 0.0 March 2021
	C4D10120A	1Mb/9P	4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Rev. 5, March 2023
	C6D10065A	1Mb/9P	6th Generation 650 V, 10 A Silicon Carbide Schottky Diode Rev. 1, March 2023
	C6D10170H	564Kb/8P	6th Generation 1700 V, 10 A Silicon Carbide Schottky Diode Rev. 0, December 2022
	C3D10060A	1Mb/8P	3rd Generation 600 V, 10 A Silicon Carbide Schottky Diode Rev. 8, March 2023
	C3D10065A	1Mb/9P	3rd Generation 650 V, 10 A Silicon Carbide Schottky Diode Rev. 6, March 2023
	C4D10120H	669Kb/9P	4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Rev. 2, January 2023
	C6D10065G	1Mb/6P	6th Generation 650 V, 10 A Silicon Carbide Schottky Diode Rev. 0, JULY 2021
	C6D10065Q	707Kb/7P	6th Generation 650 V, 10 A Silicon Carbide Schottky Diode Rev. 0, DECEMBER 2021
	WSGPA01	712Kb/7P	10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier Rev. 02.1, 2021-07-13
	CGHV96100F2	1Mb/13P	100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Rev. 3.2, 2022-12-8
	E4D10120A	1Mb/9P	E-Series Automotive 4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Rev. 1, March 2023
	PTFC270101M	933Kb/22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28

10/100/1000M Datasheet, PDF

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