2..0 X 1..8 0..8MM Datasheet(PDF) - AMS4711

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	AMS4711	539Kb/8P	Miniaturized pressure transmitter with 0 .. 5 V output March 2015 Rev. 4.0
	AMS3011	511Kb/8P	Miniaturized pressure transmitter with 0 .. 5 V output April 2016 Rev. 1.0
	AMS2710	597Kb/8P	PCB pressure sensor module with 0 .. 10 V output February 2018 Rev. 1.0
	AMS4710	610Kb/8P	Miniaturized pressure transmitter with analog 0 ... 10 V output March 2020 Rev. 1.0
	PTGA090304MD	1Mb/12P	Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 – 960 MHz Rev. 04.2, 2022-1-27
	PTMC210404MD	847Kb/8P	Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W, 28 V, 1805 – 2200 MHz Rev. 04.1, 2022-1-27
	CGH60008D	977Kb/9P	8 W, 6.0 GHz, GaN HEMT Die Rev. 1.2, 2022-11-23
	CMPA1D1J001S	912Kb/18P	12.7 – 18 GHz, 1 W GaN HPA Rev. 0.0 February 2023
	CSD01060A	1Mb/9P	600 V, 1 A Silicon Carbide Schottky Diode Rev. 18, March 2023
	CAB008A12GM3	2Mb/12P	1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module Rev. 1, April 2023
	C3D08065A	1Mb/9P	3rd Generation 650 V, 8 A Silicon Carbide Schottky Rev. 6, March 2023
	CAB008M12GM3	2Mb/12P	1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module Rev. 2, April 2023
	CG2H40010	1Mb/14P	10 W, DC - 8 GHz, RF Power GaN HEMT Rev. 2.0, 2022-7-7
	C6D08065A	1Mb/9P	6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Rev. 1, March 2023
	C4D08120A	1Mb/9P	4th Generation 1200 V, 8 A Silicon Carbide Schottky Diode Rev. 4, March 2023
	C6D08065G	1Mb/6P	6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Rev. 0, JULY 2021
	C6D08065Q	679Kb/7P	6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Rev. 0, DECEMBER 2021
	CMPA0060002F1	1Mb/10P	2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier Rev. 1.0, 2022-8-26
	CMPA0530002S	2Mb/20P	2 W, 0.5 - 3.0 GHz, 28 V, GaN MMIC Rev. 1.3, 2022-12-8
	E4D02120E	715Kb/6P	4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode Rev. 0, OCTOBER 2021

2..0 X 1..8 0..8MM Datasheet, PDF

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