HIGH CURRENT SWITCHING APPLICATION Datasheet(PDF) - AM4221

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	AM4221	123Kb/10P	VOLTAGE/CURRENT CONVERTER April 99 Rev. 2.1
	AM402	115Kb/8P	CURRENT CONVERTER IC April 99 Rev. 2.1
	AM4222	123Kb/10P	VOLTAGE/CURRENT CONVERTER April 99 Rev. 2.1
	CAS480M12HM3	1Mb/11P	1200 V, 480 A, Silicon Carbide High-Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2022-02-25
	CAS120M12BM2	968Kb/11P	1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 1, 2020-11-11
	CAS300M12BM2	776Kb/11P	1200 V, 300 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2021-02-08
	AM452	341Kb/21P	Voltage-to-current transducer IC with a differential input February 2008 Rev 1.2
	AMS5105	253Kb/8P	Pressure sensor with one analog and two switching outputs May 2012 Rev. 2.0
	AMS2712	604Kb/8P	PCB pressure sensor module with 4 .. 20 mA current output May 2017 - Rev. 1.0
	CAB425M12XM3	774Kb/9P	1200 V, 425 A All-Silicon Carbide Switching-Optimized, Half-Bridge Module Rev. -, 2020-01-28
	CAB400M12XM3	801Kb/9P	1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module Rev. -, 2019-10-31
	WAB300M12BM3	1Mb/12P	1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Rev. A 2020-05-20
	CAB760M12HM3	1Mb/11P	1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Rev. 1, 2022-02-25
	CAB760M12HM3R	1Mb/11P	1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Rev. 1, 2022-02-25
	PTRA082808NF	677Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27
	PTVA101K02EV	511Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 04, 2023-07-07
	PTVA127002EV	691Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Rev. 05, 2023-07-10
	PXAC210552FC	702Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28
	PTFC270101M	933Kb/22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28
	PTRA087008NB	731Kb/11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz Rev. 03.4, 2022-02-13

HIGH CURRENT SWITCHING APPLICATION Datasheet, PDF

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