LOW NOISE AND HIGH GAIN Datasheet(PDF) - AM461

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	AM461	61Kb/8P	AMPLIFIER AND PROTECTION IC October 2002 Rev. 1.1
	AM460	153Kb/18P	Industrial Converter and Protector IC April 2003 Rev. 1.1
	AMS5612	283Kb/6P	Calibrated and temperature compensated pressure sensor March 2015 Rev. 1.4
	AM411	350Kb/10P	Low-Cost Voltage Transmitter IC March 2015 Rev. 4.0
	AM462	299Kb/20P	Industrial V/I Converter and Protector IC Oktober 2007 Rev.2.5
	AMS5105	253Kb/8P	Pressure sensor with one analog and two switching outputs May 2012 Rev. 2.0
	AMS5812	1Mb/15P	Board Mount Pressure Sensor with Analog and I2C Output AMS 5812 Rev. 3.0
	CAV424	573Kb/14P	C/V-converter for single and differential capacitive input signals July 2014 Rev. 3.0
	CGH25120F	3Mb/12P	120 W, 2.3-2.7 GHz, GaN HEMT for WiMAX and LTE Rev. 3.4, 10-20-2022
	CGHV27060MP	1Mb/15P	60 W, DC - 2.7 GHz, 50 V, GaN HEMT for Communication Amplifiers and Pulse Radar Applications Rev. 4.2, 2022-12-2
	CGHV35060MP	2Mb/11P	60 W, 2700-3800 MHz, 50 V GaN HEMT for S-Band Radar and LTE Base Stations Rev. 2.4, 2022-12-2
	CAB760M12HM3	1Mb/11P	1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Rev. 1, 2022-02-25
	CAB760M12HM3R	1Mb/11P	1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Rev. 1, 2022-02-25
	CAS480M12HM3	1Mb/11P	1200 V, 480 A, Silicon Carbide High-Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2022-02-25
	PTRA082808NF	677Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27
	PTVA101K02EV	511Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 04, 2023-07-07
	PTVA127002EV	691Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Rev. 05, 2023-07-10
	PXAC210552FC	702Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28
	CAS120M12BM2	968Kb/11P	1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 1, 2020-11-11
	PTFC270101M	933Kb/22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28

LOW NOISE AND HIGH GAIN Datasheet, PDF

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