USES Datasheet(PDF) - FIR140N098PG - Shenzhen Foster Semiconductor Co., Ltd.

Manufacturer	Part #	Datasheet	Description
Shenzhen Foster Semicon...	FIR140N098PG	1Mb/7P	Uses split-gate technology
Gennum Corporation	GS2965	3Mb/41P	Uses standard 27MHz crystal
Gennum Corporation	GS2985	3Mb/45P	Uses standard 27MHz crystal
Silicon image	SII164	471Kb/33P	Transmitter uses PanelLink Digital technology
IK Semicon Co., Ltd	IL1937	278Kb/6P	Uses tiny 1mm Tall Inductors
GOOD-ARK Electronics	GDSSF230	446Kb/6P	SSF2302 uses advanced trench technology
ON Semiconductor	NTLJF3117P	295Kb/2P	Typical Uses for FETKY Devices Rev.0, Jun-2006
Cypress Semiconductor	W215B	168Kb/14P	Uses external 14.318-MHz crystal
Silikron Semiconductor ...	SSF2300	348Kb/7P	The SSF2300 uses advanced trench technology
Integrated Device Techn...	TSI721	423Kb/68P	This document uses the following conventions
SHENZHEN DOINGTER SEMIC...	QM3203S	1Mb/4P	N-Channel MOSFET uses advanced trench technology
	QM4003S	1Mb/4P	P-Channel MOSFET uses advanced trench technology
	QM4014D	1Mb/5P	N-Channel MOSFET uses advanced trench technology
	QM6020AP	974Kb/4P	N-Channel MOSFET uses advanced trench technology
	RJK4002DPD	1Mb/5P	N-Channel MOSFET uses advanced trench technology
	RJK5033DPP-M0	991Kb/4P	N-Channel MOSFET uses advanced trench technology
	RJK6006DPD	1Mb/5P	N-Channel MOSFET uses advanced trench technology
	RJK6009DPP-M0	1Mb/5P	N-Channel MOSFET uses advanced trench technology
	RU1H7H	1Mb/4P	N-Channel MOSFET uses advanced trench technology
	RU1H35K	1Mb/4P	N-Channel MOSFET uses advanced trench technology

USES Datasheet, PDF