| Manufacturer | Part # | Datasheet | Description |

Motorola, Inc
|
MTW6N60E |
69Kb/2P |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
| MTP1N60 |
175Kb/5P |
Power Field Effect Transister N-Channel Enhancement Mode Silicon Gate |
| MTH8N90 |
394Kb/6P |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS |
| MTH8N40 |
385Kb/5P |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |
| MRF21010 |
542Kb/8P |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| IRF530 |
157Kb/2P |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
| MFE201 |
546Kb/5P |
N-CHANNEL DUAL-GAE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS |
| MFE212 |
496Kb/5P |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS |
| MRF21030R3 |
377Kb/8P |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| IRF840 |
146Kb/2P |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
| MTM55N10 |
192Kb/5P |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
| MTH8N60 |
386Kb/5P |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |
| MRF19125 |
362Kb/12P |
RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs |
| MTE50N45 |
391Kb/7P |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS |
| MRF19045LR3 |
569Kb/12P |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF183R1 |
996Kb/12P |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9180 |
342Kb/12P |
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9085 |
491Kb/8P |
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MTD3055EL |
380Kb/6P |
TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate) |
| MRF18090A |
175Kb/8P |
1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS |