NBC-M 8MS-M 8MS/.../... - NETWORK Datasheet(PDF) - HYB511000BJ- - Siemens Semiconductor Group

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NBC-M 8MS-M 8MS/.../... - NETWORK Datasheet, PDF

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Searched Keyword : 'NBC-M 8MS-M 8MS/.../... - NETWORK ' - Total: 12 (1/1) Pages

Manufacturer	Part #	Datasheet	Description
Siemens Semiconductor G...	HYB511000BJ-	192Kb/22P	1 M x 1-Bit Dynamic RAM Low Power 1 M 쨈 1-Bit Dynamic RAM
	3VA1340-5EF32-0AA0	873Kb/7P	circuit breaker 3VA1 IEC frame 400 breaking capacity class M 04/08/2020
	6ES7194-6GA00-0AA0	158Kb/1P	SIMATIC DP, PROFINET Mounting rail for ET 200ECO PN Length 0.5 m 7/4/2022
	PEB2466	3Mb/82P	Four Channel Codec Filter with PCM- and m-Controller Interface SICOFI4-mC
	PEB20321	1Mb/326P	Multichannel Network Interface Controller for HDLC MUNICH32X
	BF997	115Kb/7P	Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations)
	3SE6604-2BA	267Kb/3P	magnetically-operated switch, contact block, large, 25 x 88 mm, 2 NC connection cable 3 m LIYY 4 x 0.25 mm2 required solenoid 3SE6704-2BA or with increased operating distance 3SE6701-2BA 10/20/2023
	BF1009S	51Kb/4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
	BF1005S	52Kb/4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1005	51Kb/4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1012	33Kb/4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
	BF1012S	43Kb/4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

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