| Manufacturer | Part # | Datasheet | Description |
STMicroelectronics
|
STGB18N40LZ_0805 |
636Kb/18P |
EAS 180 mJ - 400 V - internally clamped IGBT |
| STGB18N40LZ |
632Kb/18P |
EAS 180 mJ - 400 V - internally clamped IGBT |
| STGB18N40LZ |
896Kb/19P |
EAS 180 mJ - 390 V - internally clamped IGBT |
| STH272N6F7-6AG |
808Kb/15P |
Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A
March 2016 |
| STGB18N40LZT4 |
575Kb/16P |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Rev 7 - January 2021 |
| STH300NH02L-6 |
1Mb/15P |
Automotive-grade N-channel 24 V, 0.95 typ., 180 A |
| STGD19N40LZ |
1Mb/17P |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
October 2016 Rev 6 |
| STGD18N40LZT4 |
466Kb/16P |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Rev 1 - January 2021 |
| STH200N10WF7-2 |
377Kb/14P |
N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET
Rev 4 - July 2022 |
| RF2L16180CB4 |
2Mb/12P |
180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
April 2021 Rev 2 |
| RF2L16180CF2 |
498Kb/13P |
180 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor
April 2021 Rev 2 |
| ST24180 |
613Kb/11P |
180 W, 32 V, 2.3 to 2.5 GHz RF power LDMOS transistor
October 2020 Rev 2 |
| STH270N4F3-2 |
1,023Kb/19P |
N-channel 40 V, 1.4 m廓 typ., 180 A STripFET III Power MOSFET |
| STH180N10F3-2 |
957Kb/15P |
N-channel 100 V, 3.9 milliohm, 180 A, H2PAK-2 STripFET III Power MOSFET |
| STH360N4F6-2 |
359Kb/12P |
N-channel 40 V, 180 A STripFET??VI DeepGATE?? Power MOSFET in H짼PAK-2 package
August 2012 Rev 1 |
| STIB1060DM2T-LZ |
785Kb/23P |
SLLIMM - 2nd series IPM, 3-phase inverter, 180 mΩ typ., 10 A, 600 V Power MOSFET
March 2022 Rev 1 |
| STH400N4F6-2 |
794Kb/18P |
Automotive-grade N-channel 40 V, 0.85 m??typ.,180 A STripFET??VI DeepGATE??Power MOSFETs
February 2014 Rev 2 |
| STH315N10F7-2 |
1Mb/19P |
Automotive-grade N-channel 100 V, 2.1 m廓 typ., 180 A STripFET??F7 Power MOSFETs
September 2014 Rev 4 |
| STH260N6F6-2 |
730Kb/14P |
N-channel 60 V, 1.7 m廓 typ., 180 A STripFET??VI DeepGATE??Power MOSFET in H짼PAK-2 package |
| SPC584CX |
2Mb/153P |
SPC58 C Line - 32 bit Power Architecture automotive MCU Dual z4 cores 180 MHz, 4 MBytes Flash, HSM, ASIL-B
May 2021 |
New Zealand ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
