| Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp
|
RMQCEA3636DGBA |
416Kb/31P |
36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT
Jul. 15, 2015 |
| ISL69122 |
280Kb/3P |
Digital Dual Output, 4-Phase Configurable, VR13 PWM Controller with SVID and 2-Bit AVID Interfaces |
| ISL97691 |
1Mb/19P |
2.4V LED Driver with Independent Analog and PWM Dimming Controls of 2 Backlights for 3D Application |
| X9252 |
800Kb/19P |
Low Power + Quad 256-tap + 2-Wire Bus + Up/Down Interface Quad Digitally-Controlled (XDCP?? Potentiometer |
| RX634 |
902Kb/106P |
54 MHz 32-bit RX MCU with FPU, 90 DMIPS, up to 2-Mbyte flash memory |
| RV1S9960A |
1Mb/14P |
HIGH CMR, 15Mbps CMOS OUTPUT, LOW FORWARD-CURRENT(IF) 3.3V/5V OPERATION, 15 mm LONG-CREEPAGE 8-PIN LSDIP
Jun. 30, 2021 |
| ISL6306 |
1Mb/33P |
4-Phase PWM Controller with 8-Bit DAC Code Capable of Precision rDS(ON) or DCR Differential Current Sensing |
| NX6414EH |
173Kb/8P |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION |
| NX7335 |
187Kb/11P |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION |
| NX6240GP |
200Kb/7P |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION |
| NX6342EP |
194Kb/7P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION |
| PS7801J-1A |
202Kb/15P |
4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R (3 pF • Ω) 1-ch Optical Coupled MOS FET
April 1st, 2010 |
| NX6414EH |
165Kb/8P |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION |
| DA9168 |
1Mb/93P |
1-Cell, 1.5 A Battery Charger PMIC with 20 mA Termination, Ultra-Low IQ Reverse Boost, and I2C
07-Oct-2022 |
| NX7335 |
180Kb/11P |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION |
| NX7535 |
180Kb/11P |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION |
| RJM0407JSC |
156Kb/12P |
40 V - 20 A - N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching |
| NX6342EP |
202Kb/7P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION |
| PS7902-1A |
210Kb/10P |
4-PIN SMALL FLAT-LEAD, LOW C 횞 R (11.6 pF ??廓) 1-ch Optical Coupled MOS FET |
| SLG59M1746C |
1Mb/33P |
An Ultra-low Power, RDSON 17.6 mΩ, 1 A, 0.82 mm2 WLCSP Load Switch with Controlled Inrush Current
2-Feb-2022 |
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