2..0 X 1..8 0..8MM Datasheet(PDF) - NX7363JB-BC - Renesas Technology Corp

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2..0 X 1..8 0..8MM Datasheet, PDF

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Searched Keyword : '2..0 X 1..8 0..8MM ' - Total: 2097 (98/105) Pages

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	NX7363JB-BC	158Kb/8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
	NX7539BB-AA	173Kb/8P	LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
	NX8315XC	219Kb/9P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
	BCR4CM-16LH	99Kb/8P	Triac Medium Power Use IFGTI, IRGTI, IRGT III : 35 mA or 10mA(IGT item:1)
	NX8349YK	253Kb/9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8601BF-AA	185Kb/6P	LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
	NX7337BF-AA	165Kb/9P	LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
	NX7339BB-AA	173Kb/9P	LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
	NX7538BF-AA	167Kb/9P	LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
	NX8349TB	204Kb/9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8315XC	219Kb/9P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
	PL10790EJ01V0DS	219Kb/9P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
	RJM0404JSC	155Kb/12P	Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
	PS7200E-1A	260Kb/16P	4-PIN SOP, 0.8 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET April 1st, 2010
	PS7801E-1A	268Kb/15P	4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R, 1-ch Optical Coupled MOS FET April 1st, 2010
	70V7319	526Kb/23P	HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE OCTOBER 2019
	R5F2L357CNFP	896Kb/75P	These groups have data flash (1 KB 횞 4 blocks) with the background operation (BGO)
	NX8369TS	212Kb/9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	RJM0404JSC	155Kb/12P	Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
	NX8349TS	234Kb/11P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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