1..6 X 0..8 0..6MM Datasheet(PDF) - AS29F010 - Austin Semiconductor

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1..6 X 0..8 0..6MM Datasheet, PDF

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Searched Keyword : '1..6 X 0..8 0..6MM ' - Total: 99 (2/5) Pages

Manufacturer	Part #	Datasheet	Description
Austin Semiconductor	AS29F010	530Kb/26P	128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
	AS5C1008	109Kb/9P	128K x 8 SRAM RUGGEDIZED PLASTIC HIGH SPEED SRAM
	AS29F040	1Mb/27P	512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
	MT4C4001J	251Kb/20P	1 MEG x 4 DRAM Fast Page Mode DRAM
	MT4C4001J	1Mb/21P	1 MEG x 4 DRAM Fast Page Mode DRAM
	AS4DDR32M16	7Mb/64P	8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit
	AS4SD8M16	6Mb/51P	128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory
	AS5C512K8	416Kb/16P	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
	AS28C010	306Kb/14P	128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable
	AS5C512K8	242Kb/17P	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
	MT5C1008LL	123Kb/10P	128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER
	AS29LV016	414Kb/40P	16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory
	AS29LV016J	420Kb/40P	16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory
	MT5C1008	187Kb/17P	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
	AS5LC1008	527Kb/10P	128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
	AS5LC1008	121Kb/10P	128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
	AS5LC512K8	306Kb/13P	512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT
	AS5LC512K8	285Kb/12P	512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT
	SMJ44C251B	1Mb/57P	256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
	AS4SD2M32	1Mb/52P	512K x 32 x 4 Banks (64-Mb) Synchronous SDRAM

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