| Manufacturer | Part # | Datasheet | Description |

Cree, Inc
|
PXFE181507FC |
550Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz |
| UGF09085 |
202Kb/6P |
90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
| PXAE184408NB |
1Mb/6P |
Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz |
| PTVA120121M |
530Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 ??1400 MHz |
| PXAC182002FC |
495Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz |
| PXAC210552FC |
600Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz |
| PXAC261212FC |
557Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz |
| PTAC240502FC |
606Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz |
| PTRA093818NF |
600Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz |
| PTFC270101M |
970Kb/22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz |
| PTVA042502EC |
560Kb/10P |
Thermally-Enhanced High Power RF LDMOS FETs 250 W, 50 V, 470 - 806 MHz |
| PXAC201202FC |
590Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz |
| PXFE211507FC |
587Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz |
| PTFB201402FC |
595Kb/14P |
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz |
| PTVA043502EC |
489Kb/11P |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 - 860 MHz |
| PXAC200902FC |
600Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz |
| PTFB181702FC |
554Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 ??1880 MHz |
| PTAC260302FC |
636Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 ??2690 MHz |
| PTFC260202FC |
519Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz |
| PTRA093302FC |
482Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 ??768 MHz |