| Manufacturer | Part # | Datasheet | Description |

Hitachi Semiconductor
|
HM658512A |
105Kb/22P |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |

National Instruments Co...
|
PXI-8104RT |
1Mb/5P |
1.86 GHz Intel Celeron M Real-Time Embedded Controllers for PXI |

Fairchild Semiconductor
|
FDD86102LZ |
372Kb/6P |
N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓 |
| FDD86110 |
257Kb/6P |
N-Channel PowerTrench짰 MOSFET 100 V, 50 A, 10.2 m廓 |
| FDMC8327L |
400Kb/7P |
N-Channel PowerTrench짰 MOSFET 40 V, 14 A, 9.7 m廓 |
| FDMC8588 |
366Kb/7P |
N-Channel PowerTrench짰 MOSFET 25 V, 40 A, 5.7 m廓 |
| FDMC8588DC |
401Kb/8P |
N-Channel PowerTrench짰 MOSFET 25 V, 40 A, 5.7 m廓 |
| FDMQ86530L |
261Kb/6P |
N-Channel PowerTrench짰 MOSFET 60 V, 8 A, 17.5 m廓 |
| FDMS7560S |
469Kb/8P |
N-Channel PowerTrench짰 SyncFETTM 25 V, 49 A, 1.45 m廓 |
| FDMS8018 |
318Kb/7P |
N-Channel PowerTrench짰 MOSFET 30 V, 120 A, 1.8 m廓 |
| FDMS8020 |
263Kb/7P |
N-Channel PowerTrench짰 MOSFET 30 V, 42 A, 2.5 m廓 |
| FDMS86520 |
258Kb/7P |
N-Channel PowerTrench짰 MOSFET 60 V, 42 A, 7.4 m廓 |
| FDT1600N10ALZ |
291Kb/9P |
N-Channel PowerTrench짰 MOSFET 100 V, 5.6 A, 160 m廓 |

NXP Semiconductors
|
PSMN030-60YS_1010 |
228Kb/15P |
N-channel LFPAK 60 V 24.7 m廓 standard level MOSFET Rev. 02-25 October 2010 |

SeCoS Halbleitertechnol...
|
SMG5406 |
1Mb/4P |
3.6A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET |

NXP Semiconductors
|
PSMN7R0-100ES |
251Kb/15P |
N-channel 100V 6.8 m廓 standard level MOSFET in I2PAK. Rev. 03-23 February 2010 |
| PSMN9R0-30LL |
176Kb/13P |
N-channel QFN3333 30 V 9 m廓 logic level MOSFET Rev. 01-12 February 2010 |
| PSMN012-60YS |
241Kb/15P |
N-channel LFPAK 60 V, 11.1 m廓 standard level MOSFET Rev. 01-5 January 2010 |
| PSMN030-60YS |
238Kb/13P |
N-channel LFPAK 60 V 24.7 m廓 standard level MOSFET Rev. 01-11 February 2010 |
| PSMN045-80YS |
265Kb/14P |
N-channel LFPAK 80 V 45 m廓 standard level MOSFET Rev. 01-19 March 2010 |