| Manufacturer | Part # | Datasheet | Description |

Brilliance Semiconducto...
|
BS62LV4007 |
373Kb/10P |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit |

fujitsu semiconductor
|
MB8432 |
672Kb/18P |
2K x 8 Bits CMOS Dual-Port Static Random Access |

Integral Corp.
|
INF8594E |
98Kb/2P |
512 x 8-Bit CMOS EEPROM with I2C-Bus Interface |

ATMEL Corporation
|
AT49F040A |
248Kb/16P |
4-megabit (512K x 8) 5-volt Only Flash Memory |

Brilliance Semiconducto...
|
BS62LV1029 |
424Kb/10P |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |

ATMEL Corporation
|
AT60142E |
295Kb/17P |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |

Sharp Corporation
|
LH28F800BGHE-TL85 |
275Kb/43P |
8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGB-L |
275Kb/43P |
8 M-bit (512 kB x 16) SmartVoltage Flash Memories |

Brilliance Semiconducto...
|
BS62LV2006 |
321Kb/9P |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |

Integrated Device Techn...
|
IDT70V09 |
255Kb/17P |
HIGH-SPEED 3.3V 128K x 8 DUAL-PORT STATIC RAM |

List of Unclassifed Man...
|
STK16C68 |
100Kb/9P |
8K x 8 AutoStorePlus??nvSRAM QuantumTrap??CMOS Nonvolatile Static RAM |

National Semiconductor ...
|
NM29N16 |
503Kb/30P |
16 MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM |

NXP Semiconductors
|
PCX8582X-2 |
156Kb/20P |
256 x 8-bit CMOS EEPROMS with I2C-bus interface December 1994 |

Austin Semiconductor
|
AS5C512K8 |
416Kb/16P |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |

Macronix International
|
MX29F080 |
664Kb/38P |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY |

Sanyo Semicon Device
|
LC35V1000BM |
178Kb/9P |
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BM |
165Kb/9P |
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |

Hitachi Semiconductor
|
HM628512AI |
509Kb/17P |
524288-word x 8-bit High Speed CMOS Static RAM |

ATMEL Corporation
|
AT27C512R-70JU |
801Kb/13P |
512K (64K x 8) One-time Programmable, Read-only Memory |

STMicroelectronics
|
M48T35 |
478Kb/28P |
5 V, 256 Kbit (32 Kb x 8) TIMEKEEPER짰 SRAM June 2011 Rev 10 |