| Manufacturer | Part # | Datasheet | Description |

Fairchild Semiconductor
|
FDMS8622 |
278Kb/7P |
N-Channel Power Trench짰 MOSFET 100 V, 16.5 A, 56 m廓 |
| FDS8935 |
225Kb/6P |
Dual P-Channel PowerTrench짰 MOSFET -80 V, -2.1 A, 183 m廓 |
| FDS89161 |
266Kb/6P |
Dual N-Channel PowerTrench짰 MOSFET 100 V, 2.7 A, 105 m廓 |

NXP Semiconductors
|
PSMN2R5-30YL |
417Kb/14P |
N-channel 30 V 2.4 m廓 logic level MOSFET in LFPAK Rev. 04-10 March 2011 |
| BUK7Y7R8-80E |
298Kb/13P |
N-channel 80 V, 7.8 m廓 standard level MOSFET in LFPAK56 20 February 2013 |
| BUK7Y14-80E |
350Kb/13P |
N-channel 80 V, 14 m廓 standard level MOSFET in LFPAK56 20 February 2013 |
| BUK7Y153-100E |
319Kb/13P |
N-channel 100 V, 153 m廓 standard level MOSFET in LFPAK56 20 February 2013 |
| BUK9Y4R4-40E |
296Kb/13P |
N-channel 40 V, 4.4 m廓 logic level MOSFET in LFPAK56 20 February 2013 |
| BUK9Y8R5-80E |
319Kb/13P |
N-channel 80 V, 8.5 m廓 logic level MOSFET in LFPAK56 20 February 2013 |
| BUK9Y8R7-60E |
352Kb/13P |
N-channel 60 V, 8.7 m廓 logic level MOSFET in LFPAK56 20 February 2013 |
| BUK9Y11-80E |
322Kb/13P |
N-channel 80 V, 11 m廓 logic level MOSFET in LFPAK56 20 February 2013 |
| BUK9Y29-40E |
319Kb/13P |
N-channel 40 V, 29 m廓 logic level MOSFET in LFPAK56 20 February 2013 |
| BUK9Y41-80E |
355Kb/13P |
N-channel 80 V, 45 m廓 logic level MOSFET in LFPAK56 20 February 2013 |
| BUK9Y153-100E |
668Kb/13P |
N-channel 100 V, 153 m廓 logic level MOSFET in LFPAK56 20 February 2013 |

Infineon Technologies A...
|
SIGC144T170R2C |
127Kb/5P |
IGBT Chip in NPT-technology 1700V NPT technology 280 關m chip Edition 2.1, 11.11.2009 |

Cypress Semiconductor
|
CY7C1380D |
1Mb/33P |
18-Mbit (512 K 횞 36/1 M 횞 18) Pipelined SRAM |

PHOENIX CONTACT
|
1404712 |
128Kb/7P |
Sensor/Actuator cable - SAC-4P-M 8MR/ 2,0-PVC B-L - 1404712 |

SeCoS Halbleitertechnol...
|
SDT2P02 |
222Kb/4P |
-2.2A, -20V, RDS(ON) 200 m(ohm) Dual-P Enhancement Mode MOSFET |
| SDT3N03 |
343Kb/4P |
3.5A, 30V, RDS(ON) 55 m(ohm) Dual-N Enhancement Mode MOSFET |

MagnaChip Semiconductor...
|
MDWC0340EB |
1Mb/6P |
Common-Drain Dual N-Channel Trench MOSFET 12V, 13.6A, 2.5 m(ohm) |