| Manufacturer | Part # | Datasheet | Description |

Schneider Electric
|
XX7V1A1PAM12 |
110Kb/7P |
Ultrasonic sensors XX, ultrasonic sensor parallelepipedic, Sn 0.5 m, NO, M12 connector Apr 17, 2023 |

ATTEND Technology Inc.
|
123A-58X01 |
353Kb/3P |
M.2 Socket, H5.8 B Key 0.5 Pitch G/F, Black, Reel 2021/06/08 |

Hitachi Semiconductor
|
R1LP0408C |
78Kb/14P |
Wide Temperature Range Version 4 M SRAM (512-kword 횞 8-bit) |

Elpida Memory
|
MC-4532DA727XFA |
162Kb/14P |
32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |

Cypress Semiconductor
|
CY7C1471V33 |
698Kb/23P |
72-Mbit (2 M x 36) Flow-Through SRAM with NoBL??Architecture |

Fairchild Semiconductor
|
FDC8884 |
267Kb/7P |
N-Channel Power Trench짰 MOSFET 30 V, 6.5 A, 23 m廓 |
| FDMA3027PZ |
302Kb/8P |
Dual P-Channel PowerTrench짰 MOSFET -30 V, -3.3 A, 87 m廓 |
| FDMA7672 |
224Kb/6P |
Single N-Channel PowerTrench짰 MOSFET 30 V, 9 A, 21 m廓 |
| FDMC86244 |
324Kb/7P |
N-Channel Power Trench짰 MOSFET 150 V, 9.4 A, 134 m廓 |
| FDMS86102LZ |
306Kb/7P |
N-Channel Power Trench짰 MOSFET 100 V, 22 A, 25 m廓 |
| FDMS86200 |
319Kb/7P |
N-Channel Power Trench짰 MOSFET 150 V, 49 A, 18 m廓 |
| FDS86252 |
263Kb/6P |
N-Channel Power Trench짰 MOSFET 150 V, 4.5 A, 55 m廓 |
| FDT86246 |
232Kb/6P |
N-Channel Power Trench짰 MOSFET 150 V, 2 A, 236 m廓 |

NXP Semiconductors
|
PSMN2R1-40PL |
263Kb/13P |
N-channel 40 V, 2.2 m廓 logic level MOSFET in SOT78 1 February 2013 |
| PSMN2R6-60PS |
261Kb/13P |
N-channel 60 V, 2.6 m廓 standard level MOSFET in SOT78 5 February 2013 |
| PSMN3R3-60PL |
263Kb/13P |
N-channel 60 V, 3.4 m廓 logic level MOSFET in SOT78 7 February 2013 |
| BUK7Y7R6-40E |
312Kb/13P |
N-channel 40 V, 7.6 m廓 standard level MOSFET in LFPAK56 20 February 2013 |
| BUK7Y12-100E |
294Kb/13P |
N-channel 100 V, 12 m廓 standard level MOSFET in LFPAK56 20 February 2013 |
| BUK7Y15-60E |
350Kb/13P |
N-channel 60 V, 15 m廓 standard level MOSFET in LFPAK56 20 February 2013 |
| BUK7Y15-100E |
322Kb/13P |
N-channel 100 V, 15 m廓 standard level MOSFET in LFPAK56 20 February 2013 |