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L9680 Datasheet(PDF) 256 Page - STMicroelectronics

Part # L9680
Description  Automotive advanced airbag IC for mid/high end applications
PDF  277 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L9680 Datasheet(HTML) 256 Page - STMicroelectronics

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Electrical characteristics
L9680
256/277
DocID029257 Rev 1
16.17.3
High/low side FET test
All electrical characteristics are valid for the following conditions unless otherwise noted:
-40 °C
 Ta  +95 °C, VINGOOD0(max)  VIN  35 V, 6 V  SSxy  35 V, 7 V  SYNCBOOST 
35 V.
13
RSQ_LOW_TH
Detection threshold for
“resistance too low”
Design Info
200
-
500
14a
IRSQ_LOW_TH
Equivalent to resistance range
-25 °C ≤ Tj ≤ +150 °C
guaranteed by
design/characterization
-12%
6
+12%
mA
14b
-40 °C ≤ Tj ≤ +150 °C
-17%
6
+12%
mA
15
TFLT_RLOW
“Resistance too low”
deglitch filter time
-12
15
18
μs
16
RSQ_HIGH
Detection Threshold for
“resistance too high”
Design Info
2
-
5
kΩ
17
IRSQ_HIGH
Equivalent to resistance range
-17%
700
+17%
μA
18
TFLT_RHIGH
“Resistance too high”
deglitch filter time
-12
15
18
μs
19
Tdelay_STG_sele
ction
Time needed to change
the VRCM STG thresholds
(450 μA-to-2 mA or 2 mA-
to-450 μA)
guaranteed by design
-
-
2
μs
Table 58. Squib Leakage Test (VRCM)
No
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 59. High/low side FET test
No
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
1IHS_FET_TH
Detection threshold
high side FET test
-
-12%
1.8
+12%
mA
2ILS_FET_TH
Detection threshold
low side FET test
SYS_CTL(PD&VRCM_SEL) = 0 -15.5%
450
+15.5%
μA
3ILS_FET_TH_HIGH
SYS_CTL(PD&VRCM_SEL) = 1
-15%
2
+15%
mA
4EFET_TEST
Energy transferred to
squib during HS/LS
FET tests
Design Info
-
-
170
μJ
5TDRIVER_DIS
Driver Disable time
Guarantee by design
-
-
1.5
μs
6
TTOT_FETTEST_A
CTIVE
Total FET test
activation time in case
of no fault condition
Guarantee by design
-
-
4
μs
7TFETTIMEOUT
HS/LS FET test
timeout
-
190
200
210
μs



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