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2N3904 Datasheet(PDF) 2 Page - ON Semiconductor |
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2N3904 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page ![]() 2N3903, 2N3904 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 – Vdc Collector–Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 – Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 – Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL – 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX – 50 nAdc ON CHARACTERISTICS DC Current Gain (Note 2.) (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 (IC = 50 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 (IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 hFE 20 40 35 70 50 100 30 60 15 30 – – – – 150 300 – – – – – Collector–Emitter Saturation Voltage (Note 2.) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) – – 0.2 0.3 Vdc Base–Emitter Saturation Voltage (Note 2.) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) 0.65 – 0.85 0.95 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903 2N3904 fT 250 300 – – MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo – 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo – 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Ω Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10–4 Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hfe 50 100 200 400 – Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 40 mmhos Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3903 2N3904 NF – – 6.0 5.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, td – 35 ns Rise Time (VCC 3.0 Vdc, VBE 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) tr – 35 ns Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, 2N3903 IB1 = IB2 = 1.0 mAdc) 2N3904 ts – – 175 200 ns Fall Time tf – 50 ns 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%. |
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