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STM32L4A6VG Datasheet(PDF) 128 Page - STMicroelectronics |
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STM32L4A6VG Datasheet(HTML) 128 Page - STMicroelectronics |
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128 / 282 page ![]() Electrical characteristics STM32L4A6xG 128/282 DS11584 Rev 8 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 23 are derived from tests performed under the ambient temperature condition summarized in Table 22. The requirements for power-up/down sequence specified in Section 3.10.1: Power supply schemes must be respected. 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 24 are derived from tests performed under the ambient temperature conditions summarized in Table 22: General operating conditions. Table 23. Operating conditions at power-up / power-down(1) 1. At Power up, the VDD12 voltage should not be forced externally Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 10 ∞ tVDDA VDDA rise time rate - 0 ∞ µs/V VDDA fall time rate 10 ∞ tVDDUSB VDDUSB rise time rate - 0 ∞ µs/V VDDUSB fall time rate 10 ∞ tVDDIO2 VDDIO2 rise time rate - 0 ∞ µs/V VDDIO2 fall time rate 10 ∞ Table 24. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs VBOR0(2) Brown-out reset threshold 0 Rising edge 1.62 1.66 1.7 V Falling edge 1.6 1.64 1.69 VBOR1 Brown-out reset threshold 1 Rising edge 2.06 2.1 2.14 V Falling edge 1.96 2 2.04 VBOR2 Brown-out reset threshold 2 Rising edge 2.26 2.31 2.35 V Falling edge 2.16 2.20 2.24 VBOR3 Brown-out reset threshold 3 Rising edge 2.56 2.61 2.66 V Falling edge 2.47 2.52 2.57 VBOR4 Brown-out reset threshold 4 Rising edge 2.85 2.90 2.95 V Falling edge 2.76 2.81 2.86 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.1 2.15 2.19 V Falling edge 2 2.05 2.1 |
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