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STM32L4A6VG Datasheet(PDF) 173 Page - STMicroelectronics |
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STM32L4A6VG Datasheet(HTML) 173 Page - STMicroelectronics |
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173 / 282 page ![]() DS11584 Rev 8 173/282 STM32L4A6xG Electrical characteristics 252 Figure 31. HSI48 frequency versus temperature Low-speed internal (LSI) RC oscillator NT jitter Next transition jitter Accumulated jitter on 28 cycles(4) -- +/-0.15(2) -ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(4) -- +/-0.25(2) -ns 1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified. 2. Guaranteed by design. 3. Guaranteed by characterization results. 4. Jitter measurement are performed without clock source activated in parallel. Table 60. HSI48 oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 61. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI Frequency VDD = 3.0 V, TA = 30 °C 31.04 - 32.96 kHz VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34 tSU(LSI)(2) LSI oscillator start- up time -- 80 130 μs tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency - 125 180 μs IDD(LSI)(2) LSI oscillator power consumption -- 110 180 nA 1. Guaranteed by characterization results. 2. Guaranteed by design. |
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