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STM32L4A6VG Datasheet(PDF) 180 Page - STMicroelectronics |
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STM32L4A6VG Datasheet(HTML) 180 Page - STMicroelectronics |
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180 / 282 page ![]() Electrical characteristics STM32L4A6xG 180/282 DS11584 Rev 8 Ilkg(4) FT_xx input leakage current(3)(5) VIN ≤ Max(VDDXXX)(6)(7) -- ±100 nA Max(VDDXXX) ≤ VIN ≤ Max(VDDXXX)+1 V(6)(7) -- 650 Max(VDDXXX)+1 V < VIN ≤ 5.5 V(6)(7) -- 200 FT_lu, FT_u, PB2 and PC3 IO VIN ≤ Max(VDDXXX) (6)(7) -- ±150 Max(VDDXXX) ≤ VIN ≤ Max(VDDXXX)+1 V(6)(7) - - 2500(3) Max(VDDXXX)+1 V < VIN ≤ 5.5 V(6)(7) -- 250 TT_xx input leakage current VIN ≤ Max(VDDXXX)(6) -- ±150 Max(VDDXXX) ≤ VIN < 3.6 V(6) - - 2000(3) OPAMPx_VINM (x=1,2) dedicated input leakage current (UFBGA132 only) -- - (8) RPU Weak pull-up equivalent resistor (9) VIN = VSS 25 40 55 kΩ RPD Weak pull-down equivalent resistor(9) VIN = VDDIOx 25 40 55 kΩ CIO I/O pin capacitance - - 5 - pF 1. Refer to Figure 32: I/O input characteristics. 2. Guaranteed by test production. 3. Guaranteed by design. 4. This value represents the pad leakage of the IO itself. The total product pad leakage is provided by this formula: ITotal_Ileak_max = 10 µA + [number of IOs where VIN is applied on the pad] ₓ Ilkg(Max). 5. All FT_xx GPIOs except FT_lu, FT_u, PB2 and PC3. 6. Max(VDDXXX) is the maximum value of all the I/O supplies. 7. To sustain a voltage higher than Min(VDD, VDDA, VDDIO2, VDDUSB, VLCD) +0.3 V, the internal Pull-up and Pull-Down resistors must be disabled. 8. Refer to Ibias in Table 86: OPAMP characteristics for the values of the OPAMP dedicated input leakage current. 9. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). Table 70. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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