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STM32L4A6VG Datasheet(PDF) 230 Page - STMicroelectronics

Part # STM32L4A6VG
Description  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, 1MB Flash, 320KB SRAM, USB OTG FS, audio, AESHASH, ext. SMPS
PDF  282 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L4A6VG Datasheet(HTML) 230 Page - STMicroelectronics

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Electrical characteristics
STM32L4A6xG
230/282
DS11584 Rev 8
Figure 47. USB OTG timings – definition of data signal rise and fall time
Table 103. USB OTG electrical characteristics(1)
Driver characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
trLS
Rise time in LS(2)
CL = 200 to 600 pF
75
300
ns
tfLS
Fall time in LS(2)
CL = 200 to 600 pF
75
300
ns
trfmLS
Rise/ fall time matching in LS
tr/tf
80
125
%
trFS
Rise time in FS(2)
CL = 50 pF
4
20
ns
tfFS
Fall time in FS(2)
CL = 50 pF
4
20
ns
trfmFS
Rise/ fall time matching in FS
tr/tf
90
111
%
VCRS
Output signal crossover voltage (LS/FS)
-
1.3
2.0
V
ZDRV
Output driver impedance(3)
Driving high or low
28
44
Ω
1. Guaranteed by design.
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.
Table 104. USB BCD DC electrical characteristics(1)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IDD(USBBCD)
Primary detection mode
consumption
--
-
300
μA
Secondary detection mode
consumption
--
-
300
μA
RDAT_LKG
Data line leakage
resistance
-300
-
-
kΩ
VDAT_LKG
Data line leakage voltage
-
0.0
-
3.6
V
RDCP_DAT
Dedicated charging port
resistance across D+/D-
--
-
200
Ω
VLGC_HI
Logic high
-
2.0
-
3.6
V
VLGC_LOW
Logic low
-
-
-
0.8
V
VLGC
Logic threshold
-
0.8
2.0
V



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