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NE688M23 Datasheet(PDF) 1 Page - NEC |
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NE688M23 Datasheet(HTML) 1 Page - NEC |
1 / 2 page ![]() NE688M23 NPN SILICON TRANSISTOR • NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height – Ceramic substrate for better RF performance • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz • HIGH COLLECTOR CURRENT: IC MAX = 100 mA FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 PRELIMINARY DATA SHEET PART NUMBER NE688M23 EIAJ1 REGISTERED NUMBER 2SC5651 PACKAGE OUTLINE M23 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX fT Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz GHz 4 5 NF Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz dB 1.9 2.5 |S21E|2 Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz dB 3 4 hFE2 Forward Current Gain at VCE = 1 V, IC = 3 mA 80 145 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 CRE3 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF 0.7 0.8 ELECTRICAL CHARACTERISTICS (TA = 25°C) PIN CONNECTIONS 1. Collector 2. Emitter 3. Base California Eastern Laboratories Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. DESCRIPTION The NE688M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles. 0.15 0.2 0.15 2 1 0.25 0.25 0.4 0.5 0.6 BOTTOM VIEW 3 |
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