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STM32L4P5CE Datasheet(PDF) 199 Page - STMicroelectronics |
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STM32L4P5CE Datasheet(HTML) 199 Page - STMicroelectronics |
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199 / 310 page ![]() DS12903 Rev1 199/310 STM32L4P5xx Electrical characteristics 277 Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. 6.3.12 Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the ANSI/JEDEC standard. Table 67. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fHCLK] Unit 8 MHz/120 MHz SEMI Peak level Vdd=3.6 V, TA =25°C, LQFP144 package, conforming to IEC61967-2 0.1 MHz to 30 MHz 16 dBμV 30 MHz to 130 MHz 16 130 MHz to 1 GHz 19 1 GHz to 2 GHz 12 EMI Level 3.5 - Table 68. ESD absolute maximum ratings Symbol Ratings Conditions Packages Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS-001 All 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS-002 LQFP144 C1 250 V All others(2) C2a 500 1. Guaranteed by characterization results. 2. For all other packages except WLCSP100. |
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