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STM32G47PBY6TR Datasheet(PDF) 104 Page - STMicroelectronics |
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STM32G47PBY6TR Datasheet(HTML) 104 Page - STMicroelectronics |
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104 / 229 page ![]() IDD (Shutdown with RTC) Supply current in Shutdown mode (backup registers retained) RTC enabled RTC clocked by LSE bypassed at 32768 Hz 1.8 V 330 445 1150 2700 6800 - - - - - nA 2.4 V 460 605 1450 3350 8150 - - - - - 3 V 745 1000 2200 4550 10500 - - - - - 3.6 V 2100 2850 4900 8150 15500 - - - - - RTC clocked by LSE quartz(2) in low drive mode 1.8 V 285 450 1050 2500 - - - - - - 2.4 V 410 585 1300 3050 - - - - - - 3 V 565 770 1750 3750 - - - - - - 3.6 V 780 1200 2400 4850 - - - - - - IDD(wakeup from Shutdown) Supply current during wakeup from Shutdown mode Wakeup clock is HSI16 = 16 MHz(3) 3 V 1.6 - - - - --- -- mA 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. 3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 36: Low-power mode wakeup timings. Table 33. Current consumption in Shutdown mode (continued) Symbol Parameter Conditions TYP MAX(1) Unit - VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C |
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