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STM32G47PBY6TR Datasheet(PDF) 124 Page - STMicroelectronics |
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STM32G47PBY6TR Datasheet(HTML) 124 Page - STMicroelectronics |
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124 / 229 page  Electrical characteristics STM32G473xB STM32G473xC STM32G473xE 124/229 DS12712 Rev 3 To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. 5.3.12 Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the ANSI/JEDEC standard. Table 50. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fHCLK] Unit 8 MHz / 170 MHz SEMI Peak level VDD = 3.6 V, TA = 25 °C, LQFP128 package compliant with IEC 61967-2 0.1 MHz to 30 MHz 4 dBµV 30 MHz to 130 MHz 0 130 MHz to 1 GHz 16 1 GHz to 2 GHz 11 EMI Level 3.5 - Table 51. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS-001 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS- 002 LQFP100 and LQFP128 C1 250 V Other packages C2a 500 1. Guaranteed by characterization results. |
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