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STM32G474PBY3TR Datasheet(PDF) 121 Page - STMicroelectronics |
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STM32G474PBY3TR Datasheet(HTML) 121 Page - STMicroelectronics |
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121 / 236 page ![]() DS12288 Rev 5 121/236 STM32G474xB STM32G474xC STM32G474xE Electrical characteristics 200 5.3.8 Internal clock source characteristics The parameters given in Table 43 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 17: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator Table 43. HSI16 oscillator characteristics(1) 1. Guaranteed by characterization results. Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz TRIM HSI16 user trimming step Trimming code is not a multiple of 64 0.2 0.3 0.4 % Trimming code is a multiple of 64 -4 -6 -8 DuCy(HSI16)(2) 2. Guaranteed by design. Duty Cycle - 45 - 55 % ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TA= 0 to 85 °C -1 - 1 % TA= -40 to 125 °C -2 - 1.5 % ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD=1.62 V to 3.6 V -0.1 - 0.05 % tsu(HSI16)(2) HSI16 oscillator start-up time -- 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time -- 3 5 μs IDD(HSI16)(2) HSI16 oscillator power consumption -- 155 190 μA |
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