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STM32L552CCT3PTR Datasheet(PDF) 148 Page - STMicroelectronics |
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STM32L552CCT3PTR Datasheet(HTML) 148 Page - STMicroelectronics |
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148 / 340 page ![]() Electrical characteristics STM32L552xx 148/340 DS12737 Rev 6 5.3.3 Operating conditions at power-up / power-down The parameters given in Table 30 are derived from tests performed under the ambient temperature condition summarized in Table 27. 5.3.4 Embedded reset and power control block characteristics The parameters given in Table 31 are derived from tests performed under the ambient temperature conditions summarized in Table 27: General operating conditions. Table 30. Operating conditions at power-up / power-down(1) 1. At power-up, the VDD12 voltage should not be forced externally. Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 10 ∞ tVDDA VDDA rise time rate - 0 ∞ VDDA fall time rate 10 ∞ tVDDUSB VDDUSB rise time rate - 0 ∞ VDDUSB fall time rate 10 ∞ tVDDIO2 VDDIO2 rise time rate - 0 ∞ VDDIO2 fall time rate 10 ∞ Table 31. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs VBOR0(2) Brown-out reset threshold 0 Rising edge 1.62 1.66 1.7 V Falling edge 1.6 1.64 1.69 VBOR1 Brown-out reset threshold 1 Rising edge 2.06 2.1 2.14 V Falling edge 1.96 2 2.04 VBOR2 Brown-out reset threshold 2 Rising edge 2.26 2.31 2.35 V Falling edge 2.16 2.20 2.24 VBOR3 Brown-out reset threshold 3 Rising edge 2.56 2.61 2.66 V Falling edge 2.47 2.52 2.57 VBOR4 Brown-out reset threshold 4 Rising edge 2.85 2.90 2.95 V Falling edge 2.76 2.81 2.86 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.1 2.15 2.19 V Falling edge 2 2.05 2.1 VPVD1 PVD threshold 1 Rising edge 2.26 2.31 2.36 V Falling edge 2.15 2.20 2.25 |
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