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STM32L552CCT3PTR Datasheet(PDF) 258 Page - STMicroelectronics

Part # STM32L552CCT3PTR
Description  Ultra-low-power Arm® Cortex®-M33 32-bit MCUTrustZone®FPU, 165 DMIPS, up to 512 KB Flash memory, 256 KB SRAM, SMPS
PDF  340 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L552CCT3PTR Datasheet(HTML) 258 Page - STMicroelectronics

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Electrical characteristics
STM32L552xx
258/340
DS12737 Rev 6
Figure 46. VREFBUF in case VRS = 0
IINRUSH
Control of
maximum DC
current drive
on VREFBUF_
OUT during
start-up phase
(4)
--
-
8
-
mA
IDDA(VREF
BUF)
VREFBUF
consumption
from VDDA
Iload = 0 µA
-
16
25
µA
Iload = 500 µA
-
18
30
Iload = 4 mA
-
35
50
1. Guaranteed by design and characterization result, unless otherwise specified.
2. In degraded mode, the voltage reference buffer can not maintain accurately the output voltage which follows (VDDA - drop
voltage).
3. The capacitive load must include a 100 nF capacitor in order to cut-off the high frequency noise.
4. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in
the range [2.4 V to 3.6 V] and [2.8 V to 3.6 V] respectively for VRS = 0 and VRS = 1.
Table 117. VREFBUF characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
MSv62522V1
2.025
2.03
2.035
2.04
2.045
2.05
2.055
2.06
-40
-20
0
20
40
60
80
100
120
V
°C
Mean
Min
Max



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