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SH7041A Datasheet(PDF) 718 Page - Renesas Technology Corp |
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SH7041A Datasheet(HTML) 718 Page - Renesas Technology Corp |
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718 / 923 page ![]() 680 5. Terminate the writing if a write malfunction occurs in consecutive addresses. In such cases, check for problems in the EPROM writer and/or socket adapter. There are some cases where write/verify will not be possible if using an EPROM writer with a high impedance power supply system. 6. Use a EPROM writer that conforms to the socket adapter supported by this LSI. 21.3.4 Post-Write Reliability High temperature biasing (or burn-in) of devices is recommended after writing in order to improve the data retention characteristics. High temperature biasing is a method of screening that eliminates parts with faulty initial data retention by on-chip PROM memory cells within a short period of time. Figure 21.8 shows the flow from the on-chip PROM programming including screening to the installation of the device on a board. Program write/verify Installation on board Figure 21.5 (flowchart) Unpowered high- temperature bias (125–150 °C, 24–48 hours) Data read out and verify (V CC = 5.0 V) Figure 21.8 Screening Flow If there are any abnormalities in program write/verify or program read-out verification after high temperature biasing, please contact a Renesas Technology technical representative. |
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