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STM32H750VB Datasheet(PDF) 335 Page - STMicroelectronics |
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STM32H750VB Datasheet(HTML) 335 Page - STMicroelectronics |
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335 / 337 page ![]() Revision history STM32H750VB STM32H750ZB STM32H750IB STM32H750XB 334/336 DS12556 Rev 6 0 5-Feb- 2021 6 Added indication that patents apply to the devices in Features. Added connection between SDMMC2 and D2-to-D3 AHB bus in Figure 3: STM32H750xB bus matrix. Updated Section 3.27: True random number generator (RNG). Added Full-duplex mode in Section 3.34: Serial peripheral interfaces (SPI)/integrated interchip sound interfaces (I2S). Updated J1 and F2 signals in Figure 8: TFBGA240+25 ballout. Section 6: Electrical characteristics (rev Y): – Added a 1 μF capacitor between VDD33USB and ground in Figure 11: Power supply scheme. – Table 51: Flash memory programming: removed reference to single bank configuration in title and added tERASE128KB typical and maximum values. – Added reference to AN4899 in Section 6.3.15: I/O port characteristics. Updated notes in Table 62: Output timing characteristics (HSLV ON). – Updated tsu(DV-CLKH)/th(DV-CLKH) and tsu(NWAIT-CLKH)/th(NWAIT-CLKH) in Table 72: Synchronous multiplexed NOR/PSRAM read timings. Changed t(NWAIT-CLKH) to tsu(NWAIT-CLKH) and updated tsu(DV-CLKH)/th(DV-CLKH) and tsu(NWAIT-CLKH)/th(NWAIT-CLKH) in Table 74: Synchronous non-multiplexed NOR/PSRAM read timings. Updated tsu(SDCLKH _Data) and th(SDCLKH _Data) in Table 78: SDRAM read timings and Table 79: LPSDR SDRAM read timings. – Updated ts(IN) and th(IN) in Table 82: QUADSPI characteristics in SDR mode and tsr(IN)/tsf(IN) and thr(IN)/thf(IN) in Table 83: QUADSPI characteristics in DDR mode. – Updated maximum sampling time (tS) value in Table 85: ADC characteristics. Specified that Figure 36: ADC accuracy characteristics (example for 12-bit resolution) is an example for 12-bit resolution. – Updated tsu(MI) and th(MI) minimum values in Table 104: SPI dynamic characteristics. – Updated tISU, tIH, tISUDand tIHD in Table 108: Dynamic characteristics: SD / MMC characteristics, VDD = 2.7 to 3.6 V. Updated tISU, tIH in Table 109: Dynamic characteristics: eMMC characteristics, VDD = 1.71 to 1.9 V. – Updated DuCyCKOUT in Table 98: DFSDM measured timing - 1.62-3.6 V. Table 223. Document revision history Date Revision Changes |
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