ST25DV04K datasheet(147/200 Pages) STMICROELECTRONICS

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9.4

RF electrical parameters

This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the

device in RF mode.

The parameters in the DC and AC characteristics tables that follow are derived from tests performed under the

Measurement Conditions summarized in the relevant tables. Designers should check that the operating conditions

in their circuit match the measurement conditions when relying on the quoted parameters.

Table 253. RF characteristics

Symbol

Parameter

Condition

Min

Typ

Max

Unit

fCC

External RF signal frequency

13.553

13.56

13.567

MHz

H_ISO

Operating field according to ISO

Range 6

TA = -40 °C to 85 °C

150

5000

mA/m

Range 8

TA = -40 °C to 105 °C

MICARRIER

10% carrier modulation index (1)

MI=(A-B)/(A+B)

150 mA/m > H_ISO > 1000 mA/m

100% carrier modulation index

MI=(A-B)/(A+B) (2)

100

tMIN CD

Minimum time from carrier generation to

first data

From H-field min

fSH

Subcarrier frequency high

FCC/32

423.75

kHz

fSL

Subcarrier frequency low

FCC/28

484.28

kHz

Time for ST25DVxxx response

4352/FC

318.6

320.9

323.3

µs

Time between commands

4192/FC

309

311.5

314

µs

Time between commands

4384/FC

323.3

µs

Wt_Block

RF User memory write time (including

internal Verify) (3)

1 Block

5.2

4 Blocks

19.7

Wt_Byte

RF system memory write time including

internal Verify)(3)

1 Byte

4.9

Wt_MB

RF Mailbox write time (from VCD request

SOF to ST25DVxxx response EOF)(3)(4)

256 Byte

80.7

Read_MB

RF Mailbox read time (from VCD request

SOF to ST25DVxxx response EOF) (3)(4)

256 Bytes

CTUN

Internal tuning capacitor(4)

f = 13.56 MHz

26.5

28.5

30.5

VBACK

Backscattered level as defined by ISO test

VMIN_1 (1)

RF input voltage amplitude between AC0

and AC1, VSS pin left floating, VAC0-VAC1

peak to peak(1)

Inventory and Read operations

4.8

Write operations

5.25

VMIN_2 (1)

AC voltage between AC0 and VSS or

between AC1 and VSS (1)

Inventory and Read operations

2.25

Write operations

2.7

tBootRF

Without DC supply (No VCC)

Set up time

0.6

tRF_OFF

RF OFF time

Chip reset

1. Characterized on bench.

2. Characterized at room temperature only, on wafer at POR Level.

3. For VCD request coded in 1 out of 4 and ST25DVxxx response in high data rate, single sub carrier.

4. The tuning capacitance value is measured with ST characterization equipment at chip Power On Reset.

This value is used as reference for antenna design. Minimum and Maximum values come from correlation

with industrial tester limits.

ST25DV04K ST25DV16K ST25DV64K

RF electrical parameters

DS10925 - Rev 9

page 147/200

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