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STM32H753II Datasheet(PDF) 134 Page - STMicroelectronics

Part # STM32H753II
Description  32-bit Arm® Cortex®-M7 480MHz MCUs, 2MB Flash,1MB RAM, 46 com. and analog interfaces, crypto
PDF  361 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H753II Datasheet(HTML) 134 Page - STMicroelectronics

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Electrical characteristics (rev Y)
STM32H753xI
134/360
DS12117 Rev 8
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
6.3.13
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each
sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC
JS-001 and ANSI/ESDA/JEDEC JS-002 standards.
Table 55. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fCPU]
Unit
8/400 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C, UFBGA240 package,
conforming to IEC61967-2
0.1 to 30 MHz
6
dBµV
30 to 130 MHz
5
130 MHz to 1 GHz
13
1 GHz to 2 GHz
7
EMI Level
2.5
-
Table 56. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Packages
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body
model)
TA= +25 °C conforming to
ANSI/ESDA/JEDEC JS-
001
All
1C
1000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C conforming to
ANSI/ESDA/JEDEC JS-
002
All
C1
250
1. Guaranteed by characterization results.



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