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STM32H753II Datasheet(PDF) 232 Page - STMicroelectronics |
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STM32H753II Datasheet(HTML) 232 Page - STMicroelectronics |
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232 / 361 page  Electrical characteristics (rev V) STM32H753xI 232/360 DS12117 Rev 8 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for STM8AL/AF/S, STM32 MCUs and MPUs” available from the ST website www.st.com. Figure 73. Typical application with a 32.768 kHz crystal 1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 7.3.9 Internal clock source characteristics The parameters given in Table 142 to Table 145 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 121: General operating conditions. 48 MHz high-speed internal RC oscillator (HSI48) ai17531c STM32 OSC32_OUT fHSE CL1 RF 32.768 kHz resonator Bias controlled gain OSC32_IN CL2 Resonator with integrated capacitors Table 142. HSI48 oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI48 HSI48 frequency VDD=3.3 V, TJ=30 °C 47.5(1) 48 48.5(1) MHz TRIM(2) USER trimming step - - 0.175 - % USER TRIM COVERAGE(3) USER TRIMMING Coverage ± 32 steps ±4.79 ±5.60 - % DuCy(HSI48)(2) Duty Cycle - 45 - 55 % ACCHSI48_REL(3)(4) Accuracy of the HSI48 oscillator over temperature (factory calibrated) TJ=-40 to 125 °C –4.5 - 3.5 % ∆VDD(HSI48)(3) HSI48 oscillator frequency drift with VDD(5) VDD=3 to 3.6 V - 0.025 0.05 % VDD=1.62 V to 3.6 V - 0.05 0.1 tsu(HSI48)(2) HSI48 oscillator start-up time - - 2.1 4.0 µs IDD(HSI48)(2) HSI48 oscillator power consumption - - 350 400 µA NT jitter Next transition jitter Accumulated jitter on 28 cycles(6) - - ± 0.15 - ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(6) - - ± 0.25 - ns 1. Guaranteed by test in production. 2. Guaranteed by design. 3. Guaranteed by characterization. |
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