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STM32G483CEU6 Datasheet(PDF) 162 Page - STMicroelectronics |
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STM32G483CEU6 Datasheet(HTML) 162 Page - STMicroelectronics |
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162 / 230 page ![]() Electrical characteristics STM32G483xE 162/230 DS12997 Rev 4 Figure 34. OPAMP noise density @ 25°C 1. Guaranteed by design, unless otherwise specified. 2. Data guaranteed on normal and high speed mode unless otherwise specified. 3. Guaranteed by characterization results. 4. Valid also for inverting gain configuration with external bias. 5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 MSv62525V1 |
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