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I.MX8XLITE Datasheet(PDF) 20 Page - NXP Semiconductors

Part # I.MX8XLITE
Description  i.MX 8XLite Industrial Applications Processors
PDF  112 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

I.MX8XLITE Datasheet(HTML) 20 Page - NXP Semiconductors

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Table 8. i.MX 8XLite Key State (KSx) power consumption (continued)
Mode
Test conditions
Supply
Max
Unit
KS1 1 SCU RAMs and IO state retained.
DRAM in self-refresh, associated I/O’s OFF.
32K running, 24M, PLLs and ring oscillators OFF.
PHYs are in idle state.
MEMC supplies OFF.
DDR_PLL ON
MAIN 3 dropped to 0.8 V.
VDD_ANAx_1P8 (1.8 V)
0.9
mA
VDD_MEMC (OFF)
-
mA
VDD_MAIN (0.8 V)
6.4
mA
VDD_DDR_VDDQ 4 (1.1
V)
1
mA
Total
7.84
mW
KS4 5 Leakage test, not intended as a customer use case.
Overdrive conditions set, memories active, all sub-systems
powered ON.
Active power minimized.
VDD_ANAx_1P8 (1.8 V)
11
mA
VDD_MEMC (1.1 V)
1313
mA
VDD_MAIN (1.0 V)
405
mA
Total
1869
mW
1. Maximum values are for 25 °C Tambient.
2. Maximum values are for 125 °C Tjunction.
3. 0.8 V nominal—voltage specification under this case is ±3%.
4. VDD_DDR_VDDQ may be turned off during self refresh if compliant with the JEDEC specification for the DRAM device
and power supply design.
5. Maximum values are for 125 °C Tjunction. Stated supply voltage do not exceed +2% during test.
3.1.7 USB 2.0 PHY typical current consumption in Power-Down
mode
In power down mode, everything is powered down, including the VBUS valid
detectors, typical condition. The following table shows the USB interface typical
current consumption in Power-Down mode.
Table 9. USB 2.0 PHY typical current consumption in Power-Down Mode
VDD_USB_3P3 (3.3 V)
VDD_USB_1P8 (1.8 V)
Current
180 μA
60 μA
3.2 Power supplies requirements and restrictions
The system design must comply with power-up sequence, power-down sequence, and
steady state guidelines as described in this section to ensure the reliable operation of the
device. Any deviation from these sequences may result in the following situations:
• Excessive current during power-up phase
Electrical characteristics
20
i.MX 8XLite Industrial Applications Processors, Rev. 3, 08/2023
NXP Semiconductors


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