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I.MX8XLITE Datasheet(PDF) 33 Page - NXP Semiconductors |
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I.MX8XLITE Datasheet(HTML) 33 Page - NXP Semiconductors |
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33 / 112 page ![]() 3.5.2.2 Single-voltage GPIO DC parameters Table 22 and Table 23 show single-voltage 1.8 V and 3.3 V DC parameters, respectively, for GPIO pads. These parameters are guaranteed per the operating ranges in Table 5 unless otherwise noted. Table 22. Single-voltage 1.8 V GPIO DC parameters Parameter Symbol Test Conditions Min Max Units High-level output voltage 1, 2 VOH IOH= -0.1mA DSE = 000 or 001 OVDD × 0.8 — V IOH= -2mA DSE = 010 or 011 IOH= -4mA DSE = 100 to 110 Low-level output voltage 1, 2 VOL IOL= 0.1mA DSE = 000 or 001 — OVDD × 0.2 V IOL= 2mA DSE = 010 or 011 IOL= 4mA DSE = 100 to 110 High-Level input voltage 2, 3 VIH — 0.65 × OVDD OVDD V Low-Level input voltage 2, 3 VIL — 0 0.35 × OVDD V Pull-up resistance RPU Vin=0V (Pullup Resistor) 20 90 kΩ Pull-down resistance Rdown Vin=OVDD( Pulldown Resistor) 20 90 kΩ Input current (no PU/PD) IIN VI = 0, VI = OVDD -5 5 μA Keeper Circuit Resistance R_Keeper VI =.3xOVDD, VI = .7x OVDD 12 92 kΩ 1. As programmed in the associated IOMUX (DSE field) register. 2. Refer to I/O Overshoot and Undershoot Parameters 3. Refer to Input Signal Monotonic Requirements for monotonic requirements. Table 23. Single-voltage 3.3 V GPIO DC parameters Parameter Symbol Test Conditions Min Max Units High-level output voltage 1, 2 VOH IOH = -0.1mA DSE = 00 or 01 0.8 × OVDD — V IOH= -2mA DSE = 10 or 11 Low-level output voltage 1, 2 VOL IOL=0.1mA DSE = 00 or 01 — 0.2 × OVDD V IOL = 2mA DSE = 10 or 11 Table continues on the next page... Electrical characteristics i.MX 8XLite Industrial Applications Processors, Rev. 3, 08/2023 33 NXP Semiconductors |
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