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I.MX8XLITE Datasheet(PDF) 34 Page - NXP Semiconductors |
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I.MX8XLITE Datasheet(HTML) 34 Page - NXP Semiconductors |
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34 / 112 page  Table 23. Single-voltage 3.3 V GPIO DC parameters (continued) Parameter Symbol Test Conditions Min Max Units High-Level input voltage 2, 3 VIH — 0.75 × OVDD OVDD V Low-Level input voltage 2, 3 VIL — 0 0.25 × OVDD V Pull-up resistance RPU Vin=0 V (Pullup Resistor) 20 90 kΩ Pull-down resistance Rdown Vin=OVDD( Pulldown Resistor) 20 90 kΩ Input current (no PU/PD) IIN VI = 0, VI = OVDD -5 5 μA Keeper Circuit Resistance R_Keeper VI =.3xOVDD, VI = .7x OVDD 6 60 kΩ 1. As programmed in the associated IOMUX (DSE field) register. 2. Refer to I/O Overshoot and Undershoot Parameters 3. Refer to Input Signal Monotonic Requirements for monotonic requirements. 3.5.3 DDR I/O DC parameters 3.5.3.1 LPDDR4 mode I/O DC parameters These parameters are guaranteed per the operating ranges in Table 5 unless otherwise noted. Table 24. LPDDR4 DC parameters Parameter Symbol Test Conditions Min Max Units High-level output voltage 1 VOH Out Drive = All setting (40,48,60,80,120,240) unterminated outputs loaded with 1pF capacitor load 0.9 × VDDQ — V Low-level output voltage 1 VOL Out Drive = All setting (40,48,60,80,120,240) unterminated outputs loaded with 1pF capacitor load — 0.1 × VDDQ V Input current (no ODT) IIN VI = VSSQ, VI = VDDQ -2 2 μA DC High-Level input voltage VIH_DC — VREF + 0.1 VDDQ V DC Low-Level input voltage VIL_DC — VSSQ VREF – 0.1 V 1. Refer to I/O Overshoot and Undershoot Parameters Electrical characteristics 34 i.MX 8XLite Industrial Applications Processors, Rev. 3, 08/2023 NXP Semiconductors |
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