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S12SCIV2/D Datasheet(PDF) 104 Page - Freescale Semiconductor, Inc |
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S12SCIV2/D Datasheet(HTML) 104 Page - Freescale Semiconductor, Inc |
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104 / 130 page ![]() MC9S12H256 Device User Guide — V01.18 A.3.1.3 Sector Erase Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes: The setup time can be ignored for this operation. A.3.1.4 Mass Erase Erasing a NVM block takes: The setup time can be ignored for this operation. A.3.2 NVM Reliability The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process monitors and burn-in to screen early life failures. Table A-11 NVM Timing Characteristics Conditions are shown in Table A-4 unless otherwise noted Num C Rating Symbol Min Typ Max Unit 1 D External Oscillator Clock fNVMOSC 0.5 32 1 NOTES: 1. Restrictions for oscillator in crystal mode apply! MHz 2 D Bus frequency for Programming or Erase Operations fNVMBUS 1 MHz 3 D Operating Frequency fNVMOP 150 200 kHz 4 P Single Word Programming Time tswpgm 46 2 2. Minimum Programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency fbus. 74.5 3 3. Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus. Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance. µs 5D Flash Burst Programming consecutive word 4 4. urst Programming operations are not applicable to EEPROM tbwpgm 20.4 2 31 3 µs 6D Flash Burst Programming Time for 32 Words 4 tbrpgm 678.4 2 1035.5 3 µs 7 P Sector Erase Time tera 20 5 5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP. 26.7 3 ms 8 P Mass Erase Time tmass 100 5 133 3 ms t era 4000 1 f NVMOP --------------------- ⋅ ≈ t mass 20000 1 f NVMOP --------------------- ⋅ ≈ Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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