RQL1001JLAQH datasheet(4/9 Pages) RENESAS

Part #	RQL1001JLAQH

Description	SiGe MMIC High Frequency Low Noise Amplifier

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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4 / 9 page

RQL1001JLAQH

REJ03G1539-0100 Rev.1.00 May 16, 2007

Page 4 of 8

.2

.4

.6

2

5

–10

–5

–3

–2

–1.5

10

5

3

2

1.5

–1

–.8

–.6

–.4

–.2

0

.2

.4

.6

.8

1

1.5

4

–4

3 4

Power Gain, Noise Figure

vs. Frequency

Frequency f (GHz)

S Parameter vs. Frequency

Test condition : VCC = 3 V, Vctrl = 2.7 V

2.0 to 3.0 GHz (0.1 GHz step)

S Parameter vs. Frequency

Power Gain, Noise Figure

vs. Control Voltage

Control Voltage Vctrl (V)

Frequency f (GHz)

S22

S11

2.0

2.5

3.0

0

5

10

15

30

0.0

1.0

2.0

2.5

3.0

VCC = 3 V

Vctrl = 2.7 V

PG

NF

20

25

1.5

0.5

-30

-20

-10

0

10

20

13

4

2

VCC = 3 V

Vctrl = 2.7 V

S11

S21

S22

1.5

3.5

2.5

0

10

15

25

0

1

2

4

5

20

5

2.0

3.0

3

VCC = 3 V

f = 2.45 GHz

PG

NF

Input Power Pin (dBm)

Pin - Pout Characteristics

3rd. Order Intermodulation Distortion

-20

0

-30

-80

-40

-10

-20

-10

0

-30

-40

0

-20

20

-60

-40

10

30

0

20

10

30

5

15

-10

20

0

VCC = 3 V

Vctrl = 2.7 V

f = 2.45 GHz

VCC = 3 V

Vctrl = 2.7 V

f = 2.45 GHz

-20

25

PG

Pout

Iope

Fundamental

(1 tone)

IMD3

(2 tone:

∆f = 1 MHz)

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